Sales Manager: Mr. Peng
Tel: +86 136 0112 5769
E-mail:sales@technol.cn
Feature: Plasma enhanced chemical vapor deposition, combined with plasma cleaning and plasma etching.
Main Function: Mainly used to make SiO2, Si3N4, amorphous Si: H, polycrystalline Si, SiC, W, Ti-Si, GaAs, GaSb, etc. dielectric, semiconductor and metal film.
Application: Suitable for all units of laboratories, colleges and universities laboratories, teaching and other projects of scientific research, product pilot use.
Technical Parameters
| Equipment Name | PECVD Equipment |
| Model | PECVD350 |
| Chamber Structure | Vertical top cover structure |
| Chamber Size | Φ350×H300mm |
| Substrate Holder Size | Φ200mm |
| Substrate Temperature | 500±5℃(932±41℉) |
| Power Supply | RF |
| Control Method | PLC Control |
| Occupied Area | (Mainframe)L1600×W800×H1700mm |
| Power | ≥6kW |
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