Sales Manager: Mr. Peng
Tel: +86 136 0112 5769
E-mail:sales@technol.cn
Feature: This equipment adopts the organic metal source of chemical vapor deposition technology, clean and non-pollution quartz tube growth chamber, 4-6 routes of reasonable gas flow control, accurate and uniform temperature control, high heating temperature and can up to 1000 ℃, combined with high-vacuum environment and vacuum annealing furnace function.
Main Function: Can be used to preparation of optoelectronics, semiconductors, graphene, microwave devices and other high-purity films.
Application: Suitable for all units of laboratories, colleges and universities laboratories, teaching and other projects of scientific research, product pilot use.
Technical Parameters
Equipment Name | Tubular CVD Equipment |
Model | CVD100 |
Chamber Structure | High purity quartz tube |
Chamber Size | Φ100×L1000mm |
Substrate Temperature | Room temperature~1000℃(1832℉), adjustable and controllable |
Power Supply | DC |
Control Method | PLC Control |
Occupied Area | (Mainframe) L1620×W1060×H1900mm |
Power | ≥6kW |