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Tubular vapor deposition equipment

Tubular CVD Equipment CVD100

Feature: This equipment adopts the organic metal source of chemical vapor deposition technology, clean and non-pollution quartz tube growth chamber, 4-6 routes of  reasonable gas flow control, accurate and uniform temperature control, high heating temperature and can up to 1000 , combined with high-vacuum environment and vacuum annealing furnace function.


Main Function: Can be used to preparation of optoelectronics, semiconductors, graphene, microwave devices and other high-purity films.


Application: Suitable for all units of laboratories, colleges and universities laboratories, teaching and other projects of scientific research, product pilot use.


Technical Parameters

Equipment NameTubular CVD Equipment
ModelCVD100
Chamber StructureHigh purity quartz tube
Chamber SizeΦ100×L1000mm
Substrate TemperatureRoom temperature~1000(1832), adjustable and controllable
Power SupplyDC
Control MethodPLC Control
Occupied Area(Mainframe) L1620×W1060×H1900mm
Power≥6kW